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Transistor
2SC5363(Tentative)
Silicon NPN epitaxial planer type
For low-voltage high-frequency amplification
Unit: mm
1.60.15
s Features
q q q
0.4
0.80.1
0.4
0.2-0.05 0.15-0.05
+0.1
High transition frequency fT. Small collector output capacitance Cob. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.
1.60.1
1.00.1
0.5
1
0.5
3
2
0.450.1 0.3
0.750.15
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg
(Ta=25C)
Ratings 9 6 2 30 125 125 -55 ~ +125 Unit V V V mA mW C C
1:Base 2:Emitter 3:Collector
EIAJ:SC-75 SS-Mini Type Package
Marking symbol : 3Y
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector output capacitance Transition frequency Foward transfer gain Noise figure
(Ta=25C)
Symbol ICBO IEBO hFE Cob fT | S21e |2 NF Conditions VCB = 5V, IE = 0 VEB = 1V, IC = 0 VCE = 3V, IC = 10mA VCB = 3V, IE = 0, f = 1MHz VCE = 3V, IC = 10mA, f = 1.5GHz VCE = 0.3V, IC = 1mA, f = 0.9GHz VCE = 0.3V, IC = 1mA, f = 0.9GHz 40 100 0.4 10 6.5 1.7 min typ max 1 1 200 0.7 pF GHz dB dB Unit A A
0 to 0.1
0.20.1
+0.1
1
Transistor
PC -- Ta
150 60 Ta=25C 125 50 25
2SC5363
IC -- VCE
30 VCE=3V
IC -- VBE
Collector power dissipation PC (mW)
Collector current IC (mA)
Collector current IC (mA)
100
40
IB=600A 500A
20 Ta=75C 15
25C -25C
75
30 400A 20 300A 200A 10 100A
50
10
25
5
0 0 20 40 60 80 100 120 140 160
0 0 1 2 3 4 5 6
0 0 0.2 0.4 0.6 0.8 1.0 1.2
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
10 3 1 0.3 Ta=75C 0.1 0.03 0.01 0.003 0.001 0.1 25C -25C IC/IB=10 120
hFE -- IC
1000 VCE=3V 300 100 30 10 3 1 0.3 0 0.1 0.1 0.1
fT -- IC
VCE=3V f=1.5GHz
Forward current transfer ratio hFE
100 Ta=75C 80 25C 60 -25C 40
20
0.3
1
3
10
30
100
0.3
1
3
10
30
100
Transition frequency fT (GHz)
0.3
1
3
10
30
100
Collector current IC (mA)
Collector current IC (mA)
Collector current IC (mA)
| S21e |2 -- IC
12 4.8
NF -- IC
1.2
Cob -- VCB
Collector output capacitance Cob (pF)
VCE=0.3V f=900MHz IE=0 f=1MHz Ta=25C
Forward transfer gain |S21e|2 (dB)
VCE=0.3V f=900MHz 10 4.0
1.0
8
Noise figure NF (dB)
3.2
0.8
6
2.4
0.6
4
1.6
0.4
2
0.8
0.2
0 0.1
0.3
1
3
10
30
100
0 0.1
0 0.3 1 3 10 1 3 10 30 100
Collector current IC (mA)
Collector current IC (mA)
Collector to base voltage VCB (V)
2
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A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR

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